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| MDD 56 Diode Modules IFRMS = 2x 150 A IFAVM = 2x 95 A VRRM = 800-1800 V VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 Type 3 1 2 TO-240 AA 2 1 3 MDD 56-08N1 B MDD 56-12N1 B MDD 56-14N1 B MDD 56-16N1 B MDD 56-18N1 B Symbol IFRMS IFAVM IFSM Test Conditions TVJ = TVJM TC = 75C; 180 sine TC = 100C; 180 sine TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine (50 Hz), sine (60 Hz), sine Maximum Ratings 150 A 95 A 71 A 1400 1650 1200 1400 9800 11300 7200 8100 -40...+150 150 -40...+125 A A A A A2s A2s A2s A2s C C C V~ V~ Features International standard package JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 q q q q q oi2dt TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT QS IRM RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies q q q q 3000 3600 q q q Mounting torque (M5) Terminal connection torque (M5) Typical including screws Test Conditions TVJ = TVJM; VR = VRRM IF = 200 A; TVJ = 25C For power-loss calculations only TVJ = TVJM TVJ = 125C; IF = 50 A, -di/dt = 3 A/ms per diode; DC current per module per diode; DC current per module 2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 90 g Characteristic Values 10 mA 1.48 0.8 3 100 24 0.51 0.255 0.71 0.355 12.7 9.6 50 V V mW mC A K/W K/W K/W K/W mm mm m/s2 q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") other values see Fig. 6/7 Creepage distance on surface Strike distance through air Maximum allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-3 MDD 56 Fig. 1 Surge overload current IFSM: Crest value, t: duration Fig. 2 oi2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus forward current and ambient temperature (per diode) Fig. 4 Single phase rectifier bridge: Power dissipation versus direct output current and ambient temperature R = resistive load L = inductive load (c) 2000 IXYS All rights reserved 2-3 MDD 56 Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) RthJC for various conduction angles d: d DC 180 120 60 30 RthJC (K/W) 0.51 0.53 0.55 0.58 0.62 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.013 0.055 0.442 ti (s) 0.0015 0.045 0.485 Fig. 7 Transient thermal impedance junction to heatsink (per diode) RthJK for various conduction angles d: d DC 180 120 60 30 RthJK (K/W) 0.71 0.73 0.75 0.78 0.82 Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.013 0.055 0.442 0.2 ti (s) 0.0015 0.045 0.485 1.25 (c) 2000 IXYS All rights reserved 3-3 |
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